High capaciy low cost multi-state magnetic memory

ABSTRACT

One embodiment of the present invention includes a multi-state current-switching magnetic memory element includes a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.11/866,830, filed on Oct. 3, 2007, by Rajiv Yadav Ranjan, et al., andentitled “IMPROVED HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY”,which is a continuation-in-part of U.S. patent application Ser. No.11/678,515, entitled “A High Capacity Low Cost Multi-State MagneticMemory,” filed Feb. 23, 2007, which was a continuation-in-part of U.S.patent application Ser. No. 11/674,124, entitled “Non-Uniform SwitchingBased on Non-Volatile Magnetic Base Memory,” filed Feb. 12, 2007, and isa continuation-in-part of U.S. patent application Ser. No. 11/860,467,entitled, “A Low Cost Multi-State Magnetic Memory”, filed Sep. 24, 2007,which is a continuation-in-part of U.S. patent application Ser. No.11/678,515, entitled “A High Capacity Low Cost Multi-State MagneticMemory,” filed Feb. 23, 2007, the disclosures of which are incorporatedherein by reference, as though set forth in full.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to non-volatile magnetic memoryand particular to multi-state magnetic memory.

2. Description of the Prior Art

Computers conventionally use rotating magnetic media, such as hard diskdrives (HDDs), for data storage. Though widely used and commonlyaccepted, such media suffer from a variety of deficiencies, such asaccess latency, higher power dissipation, large physical size andinability to withstand any physical shock. Thus, there is a need for anew type of storage device devoid of such drawbacks.

Other dominant storage devices are dynamic random access memory (DRAM)and static RAM (SRAM), which are volatile and very costly but have fastrandom read/write access time. Solid state storage, such assolid-state-nonvolatile-memory (SSNVM) devices having memory structuresmade of NOR/NAND-based Flash memory, providing fast access time,increased input/output (TOP) speed, decreased power dissipation andphysical size and increased reliability but at a higher cost which tendsto be generally multiple times higher than hard disk drives (HDDs).

Although NAND-based Flash memory is more costly than HDD's, it hasreplaced magnetic hard drives in many applications such as digitalcameras, MP3-players, cell phones, and hand held multimedia devices due,at least in part, to its characteristic of being able to retain dataeven when power is disconnected. However, as memory dimensionrequirements are dictating decreased sizes, scalability is becoming anissue because the designs of NAND-based Flash memory and DRAM memory arebecoming difficult to scale with smaller dimensions. For example,NAND-based Flash memory has issues related to capacitive coupling, fewelectrons/bit, poor error-rate performance and reduced reliability dueto decreased read-write endurance. Read-write endurance refers to thenumber of reading, writing and erase cycles before the memory starts todegrade in performance due primarily to the high voltages required inthe program, erase cycles.

It is believed that NAND Flash, especially multi-bit designs thereof,would be extremely difficult to scale below 45 nanometers. Likewise,DRAM has issues related to scaling of the trench capacitors leading tovery complex designs that are becoming increasingly difficult tomanufacture, leading to higher cost.

Currently, applications commonly employ combinations of EEPROM/NOR,NAND, HDD, and DRAM as a part of the memory in a system design. Designof different memory technology in a product adds to design complexity,time to market and increased costs. For example, in hand-heldmulti-media applications incorporating various memory technologies, suchas NAND Flash, DRAM and EEPROM/NOR Flash memory, complexity of design isincreased as are manufacturing costs and time to market. Anotherdisadvantage is the increase in size of a device that incorporates allof these types of memories therein.

There has been an extensive effort in development of alternativetechnologies such as Ovanic RAM (or phase-change memory), FerromagneticRAM (FeRAM), Magnetic RAM (MRAM), probe-based storage such as Millipedefrom International Business Machines, Inc. of San Jose, Calif., orNanochip, and others to replace memories used in current designs such asDRAM, SRAM, EEPROM/NOR Flash, NAND Flash and HDD in one form or another.Although these various memory/storage technologies have created manychallenges, there have been advances made in this field in recent years.MRAM seems to lead the way in terms of its progress in the past fewyears to replace all types of memories in the system as a universalmemory solution.

One of the problems with prior art memory structures is that the currentand power requirements are too high to make a functional memory deviceor cell. This also poses a key concern regarding the reliability of suchdevices due to likely dielectric breakdown of the tunneling barrierlayer and thereby making it non-functional.

The challenge with other prior art techniques has been that theswitching current is too high to allow the making of a functional devicefor memory applications due to the memory's high power consumption.Several recent publications, such as those cited below as references 5and 6 (5′6) have shown that the switching current can be reduced byhaving the memory element pinned by two anti-ferromagnetic (AF)-couplelayers resulting in spin oscillations or “pumping” and thereby reducingthe switching current.

An additionally known problem is using magnetic memory to store morethan two states therein. To this end, multi-level or multi-statemagnetic memory cells or elements for storing more than one bit ofinformation do not exist.

What is needed is magnetic memory for storing more than one bit ofdigital information.

SUMMARY OF THE INVENTION

To overcome the limitations in the prior art described above, and toovercome other limitations that will become apparent upon reading andunderstanding the present specification, the present invention disclosesa method and a corresponding structure for a magnetic storage memorydevice that is based on current-induced-magnetization-switching havingreduced switching current in the magnetic memory.

Briefly, an embodiment of the present invention includes multi-statecurrent-switching magnetic memory element including a stack of two ormore magnetic tunneling junctions (MTJs), each MTJ having a free layerand being separated from other MTJs in the stack by a seeding layerformed upon an isolation layer, the stack for storing more than one bitof information, wherein different levels of current applied to thememory element causes switching to different states.

These and other objects and advantages of the present invention will nodoubt become apparent to those skilled in the art after having read thefollowing detailed description of the preferred embodiments illustratedin the several figures of the drawing.

IN THE DRAWINGS

FIG. 1 shows relevant layers of a multi-state current-switching magneticmemory element 100 are shown, in accordance with an embodiment of thepresent invention.

FIG. 2 shows various states of the memory element 100.

FIG. 3 shows a graph of the level of resistance (R) of each of thelayers 118, 114, 110 and 106 (shown in the y-axis) vs. the state of thememory element 100.

FIG. 4 shows a graph 250 of the tunneling magneto resistance (TMR),shown in the y-axis, vs. the resistance area (RA). FIG. 5 shows.

FIG. 5 shows relevant layers of a multi-state current-switching magneticmemory element 600 are shown, in accordance with another embodiment ofthe present invention.

FIG. 6 shows relevant layers of a multi-state current-switching magneticmemory element 700, in accordance with yet another embodiment of thepresent invention.

FIG. 7 shows relevant layers of a multi-state current-switching magneticmemory element 800, in accordance with still another embodiment of thepresent invention.

FIG. 8 shows a program/erase circuit for programming and/or erasing thememory elements of the various embodiments of the present invention.

FIG. 9 shows a read circuit for reading the memory elements of thevarious embodiments of the present invention.

FIG. 10 shows the relevant layers of a multi-state current-switchingmagnetic memory element 1100, in accordance with an embodiment of thepresent invention.

FIGS. 11( a) and (b) show the problems inherent to the manufacturing ofearlier memory elements having mirrored MTJs.

FIGS. 12( a) and (b) show the manufacturing efficiency benefits of themethod of manufacturing of an embodiment of the present invention.

FIG. 13( a) includes Table 1 showing certain exemplary characteristicsof the embodiments of FIGS. 1, 5 and 6.

FIG. 13( b) includes Table 2 showing certain exemplary characteristicsof the embodiment of FIG. 7.

FIG. 13( c) includes Table 3 showing the possible magnetic states of twoMTJs, in an embodiment of the present invention.

FIG. 13( d) includes Table 4 showing three potential configurations, orscenarios, of MTJ resistance values, as a function of the magnesiumoxide (MgO) tunnel sizes, of magnetic memory element 1100.

FIG. 13( e) includes Table 5 showing a comparison of total resistancevalues, depending on the state of the memory element 1100 in Table 4,and the different MgO tunnel barrier thickness scenarios of Table 3.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

In the following description of the embodiments, reference is made tothe accompanying drawings that form a part hereof, and in which is shownby way of illustration of the specific embodiments in which theinvention may be practiced. It is to be understood that otherembodiments may be utilized, because structural changes may be madewithout departing from the scope of the present invention.

In an embodiment of the present invention, a multi-state magnetic memorycell is disclosed. A stack of magnetic tunnel junctions (MTJs) areformed, with each MTJ of the stack formed of a fixed layer, a barrierlayer, and a free layer. The fixed layer's magnetic polarity is static,or “fixed,” by an adjacent “pinning layer;” while the free layer'smagnetic polarity can be switched between two states by passing anelectrical current through the MTJ. Depending on the magnetic polarity,or state, of the free layer relative to the fixed layer, the MTJ iseither in a ‘0’ or a ‘1’ state.

The individual MTJs are stacked upon each other, and are separated fromMTJs that are above or below by an isolation layer. At the top of thetop-most MTJ, and at the bottom of the bottom-most MTJ, are electrodes,which serve to pass the electrical current through the stack forprogramming, erasing, and reading operations. Each collective of MTJs isoriented in a vertical manner, and are known as a stack, or memoryelement. All neighboring stacks are created by the same steps of thesame process (i.e. the stepwise addition of layers), and only becomeindividual stacks after an etching step in the manufacturing process,whereby fractions of each layer are physically removed at precisespacing intervals, creating the stack structures.

The memory element disclosed herein reduces the number of manufacturingsteps, manufacturing time, and consequently manufacturing costs, whileincreasing the consistency and reliability relative to MTJs within astack.

In prior embodiments of multi-state magnetic memory elements, themirrored layer order of the bottom stacks and top stacks required thateach MTJ undergo a unique series of otherwise identical layering steps(i.e. step 1, step 2, step 3 to form MTJ 1; but step 3, step 2, step 1to form MTJ 2); or to manufacture MTJ 1 and MTJ 2 side-by-side, and theninstitute a mid-manufacturing etching step, thus requiring two uniquepasses of the etching equipment (see U.S. patent application Ser. No.11/678,515, entitled “A High Capacity Low Cost Multi-State MagneticMemory,” filed on Feb. 23, 2007, by Ranjan et at. for more detail inthis respect). This problem is better illustrated in FIGS. 11( a) and(b).

Referring now to FIG. 1, relevant layers of a multi-statecurrent-switching magnetic memory element 100 are shown, in accordancewith an embodiment of the present invention. The memory element 100 isshown to include a bottom electrode 122 on top of which is shown formeda pinning layer 120 on top of which is shown formed a fixed layer 118,on top of which is shown formed a barrier layer 116, on top of which isformed a free layer 114, on top of which is shown formed a non-magneticlayer 112, on top of which is shown formed a free layer 110, on top ofwhich is shown formed a barrier layer 108, on top of which is shownformed a fixed layer 106, on top of which is shown formed a pinninglayer 104, on top of which is shown formed a top electrode 102. The topelectrode 102 and the bottom electrode 122 are each made of Tantalum(Ta) in an exemplary embodiment although other suitable materials arecontemplated. The layers 114, 116 and 118 are shown to form a MTJ 126separated by the layer 112 from an MTJ 124, which is formed from thelayers 106, 108 and 110. The MTJ 124 and 126 form the relevant parts ofa stack of memory elements. In fact, while two MTJs are shown to formthe stack of FIG. 1, other number of MTJs may be stacked for storingadditional bits of information.

In FIG. 1, the MTJ 126 is for storing a bit of information or twostates, ‘1’ and ‘0’, while the MTJ 124 is for storing another bit ofinformation and since each bit represents two binary states, i.e. ‘1’and ‘0’, two bits represent four binary states, generally represented as‘00’, ‘01’, ‘10’, ‘11’, or 0, 1, 2 and 3 in decimal notation,respectively. The memory element 100 advantageously stores two bits ofinformation thereby decreasing the real estate dedicated for memory andfurther increases system performance. This is particularly attractivefor embedded memory applications. Additionally, manufacturing is madeeasier and less costly and scalability is realized.

In FIG. 1, the barrier layers of each of the MTJs, such as the layer 116acts as a filter for electrons with different spins giving rise todifferent amounts of tunneling current for electrons with differentspins thereby causing two unique resistance values associated with eachMTJ for two different orientations of the free layer. In the case whereadditional MTJs are employed, each MTJ similarly has associatedtherewith, a unique resistance value.

In one embodiment of the present invention, the thickness of the layers108 and 116 to cause the MTJs 124 and 126 to have different resistancesand therefore capable of storing more than one bit.

Examples of materials used to form each of the layers of the memoryelement 100 will now be presented. It should be noted that thesematerials are merely examples and other types of materials may beemployed. The layers 104 and 122, are each typically formedsubstantially of IrMn or PtMn or NiMn or any other material includingManganese (Mn). The layers 106 and 120 are typically formedsubstantially of a magnetic material. Examples of such magnetic materialinclude CoFeB or CoFe/Ru/CoFeB. The layers 108 and 116 are each madesubstantially of a non-magnetic material, an example of which ismagnesium oxide (MgO). The layer 112 is a non-magnetic layer madesubstantially of, for example, NiNb, NiP, NiV or CuZr.

The layer 112 serves to insulate the two MTJs 124 and 126 from oneanother. In an embodiment employing more than two MTJs, another layer,such as the layer 112 would be formed on top of the layer 104 or on thebottom of the layer 120. The layers 110 and 114 are each made of CoFeBcontaining oxides intermixed. The layers 110 and 114 are substantiallyamorphous in an at-deposited state. The top electrode 102 and the bottomelectrode 122 are each made of tantalum (Ta), in one embodiment of thepresent invention, however, other types of conductive material may beemployed.

The layers 120 and 104 are anti-ferromagnetic (AF) coupling layers. Morespecifically, for example, the magnetic moment of the layer 104 helps topin the magnetic moment of the layer 106. Similarly, the magnetic momentof the layer 120 serves to pin the magnetic moment of the layer 118. Themagnetic moment of each of the layers 120 and 104 are permanently fixed.

Other choices of material for the layers 108 and 166 are aluminum oxide(Al2O3) and titanium oxide (TiO2). A thin-layer of one of theconstituent elements may be deposited prior to the deposition of thebarrier oxide layer. For example, a 2-5 A thick Mg layer may bedeposited prior to the deposition of the layers 108 and 116. This limitsany damage of the magnetic-free layer from intermixing of the elementsduring deposition. The layer 112 is a non-magnetic layer which issubstantially amorphous made of, for example, Nickel niobium (NiNb),Nickel phosphorous (NiP), Nickel vanadium (NiV), Nickel boron (NiB) orcopper-zirconium (CuZr). It should be noted that the composition ofthese alloys is chosen in such a way that the resulting alloy becomessubstantially amorphous, for example, for nickel niobium (NiNb), thetypical Nb content is maintained between 30 to 70 atomic percent and fornickel phosphorous (NiP) the phosphorous (P) content is maintainedbetween 12 and 30 atomic percent. The layer 112 serves to isolate thetwo MTJs 124 and 126 from one another. In an embodiment of the presentinvention, which employs more than two MTJs, another layer, such as thelayer 112 would be formed on top of the layer 104 or on the bottom ofthe layer 120. The layers 110 and 114 are each made of CoFeB containingoxides intermixed. The layers 110 and 114 are substantially amorphous inan as-deposited state. The top and the bottom electrodes are typicallymade of tantalum (Ta).

The layers 120 and 104 are anti-ferromagnetic (AF) coupling layers. Morespecifically, for example, the magnetic moment of the layer 104 helps topin the magnetic moment of the layer 106. Similarly, the magnetic momentof the layer 120 serves to pin the magnetic moment of the layer 118. Themagnetic moment of each of the layers 120 and 104 are permanently fixed.This is typically done by a magnetic annealing process following thedeposition of all the layers and involves heating the whole wafer underthe application of a substantially uni-axial magnetic field of Over 5kilo-oersted and a temperature of over 350 degree centigrade fortypically 2 hours. This annealing process also serves to re-crystallizethe layers 108 and 116 and their respective adjacent free layers 110 and114. This process is essential for making high performing magnetictunnel junction.

Typical thicknesses for each of the layers of the memory element 100 arenow presented. However, these sizes are merely examples, as otherthicknesses are anticipated. A typical thickness of each of the topelectrode 102 and the bottom electrode 122 is 30 to 200 nm. While apreferred thickness is typically 50 nm, the actual thickness choice maydepend on the requirements from the metallization process. The layers104 and 120 are typically 20 to 100 nm in thickness with a preferredthickness of 25-50 nm. The layers 106 and 118 are typically made ofthree layers of Cobalt-Iron (CoFe)/Ruthenium (Ru)/Cobalt-Iron-Boron(CoFeB) with CoPe layer being placed adjacent to the layers 104 and 120.The typical thickness of the CoPe layer is 3 to 10 nm, Ru layer is 0.6to 1.0 nm to create anti-ferromagnetic coupling between the two adjacentmagnetic layers of CoPe and CoFeB. The CoFeB layer is typically 2 to 10nm thick with a preferred range of 2.5 to 5 nm. The free layers 110 and114 are typically 2 to 7 nm thick with a preferred range of 2-5 nm andmay contain a 1-2 nm thick layer of Co—Pe-oxide inter-dispersed in thatlayer in order to get low switching current during current inducedswitching. The barrier layers 108 and 116 are typically 0.8 to 3 nm. Itis very likely that the two barrier layers may have slightly differentthickness, for example layer 116 can be 1.5 to 2.5 nm thick while thesecond barrier layer 108 may be 0.8 to 1.2 nm thick, and vice-versa.Additionally, the thickness and the amounts of oxide in the free-layers110 and 114 may be different by a factor of 1.5 or higher. The amorphousisolation layer 112 is typically 2 to 50 nm thick with a preferred rangebeing 2 to 10 nm. It should be pointed out that while the most preferredchoice of the non-magnetic isolation layer is amorphous non-magneticalloys, a crystalline non-magnetic alloy may also work.

During manufacturing, the layers of the memory element 100 are formed inthe manner described hereinabove. Additionally, an annealing process,which is well known, is performed heating the memory element 100 in thepresence of a magnetic field after which channels are formed in each ofthe layers 108 and 116. Following the annealing process, the fix layersare oriented in a particular orientation and the layers 108 and 116 aswell as the layers 110 and 114 take on a crystalline characteristic.

During operation, current is applied, in a perpendicular directionrelative to the plane of the paper of FIG. 1, either from a directionindicated by the arrow 128 or a direction indicated by the arrow 130.When current is applied, depending on the level of current, the magneticmoment of the layers 110 and 114 are each caused to be switched to anopposite direction, or not. Since the MTJs 124 and 126 are made withdifferent aspect ratios (or anisotropy), the switching current isdifferent for these two MTJs. For example, in one embodiment of thepresent invention, the aspect ratio for MTJ 124 is approximately 1:1.3to 1:1.5 while the aspect ratio for the MTJ 126 is approximately 1:2 to1:2.5. Therefore, the switching current for the MTJ 126 is 3-5 timeshigher than that of the MTJ 124, in the foregoing embodiment. At highcurrent levels both MTJs switch magnetic orientation, while at lowcurrent levels only the MTJ 124 having the smaller aspect ratioswitches.

The state of the magnetic moment of each of the layers of the MTJdefines the state of the memory element 100. As the layers 104 and 120each act as AF coupling layers, they pin or switch the magnetic momentsof the their neighboring fixed layer, which, then, by the application ofcurrent, causes neighboring free layers to switch or not. Morespecifically, the layer 118 defines one state, the layer 114 definesanother state, the layer 110 defines yet another state and the layer 106defines still another state. For the sake of understanding, the statesof each of the layers 118, 114, 110 and 106 are referred to as states 1,2, 3 and 4, respectively.

FIG. 2 shows various states of the memory element 100. Due to the use oftwo MTJs, four different states or two bits may be stored, therefore,the states 1-4 are shown. At each state, the directions of the arrowsindicate the direction of the magnetic moments of free layers andpinning layers. The direction of the arrow 200 shows the direction ofhigh current applied to the memory element 100 and in this case, thestate of the memory element 100 is at an all ‘1’s or all ‘0’s state. Thedirection of the arrow 202 shows the direction of low current applied tothe memory element 100 when at state 1. The direction of the arrow 204shows the direction of high current applied to the memory element 100when the latter is at state 2 and the direction of the arrow 206 showsthe direction of low current applied to the memory element 100 when atstate 3.

FIG. 3 shows a graph of the level of resistance (R) of each of thelayers 118, 114, 110 and 106 (shown in the y-axis) vs. the state of thememory element 100. Thus, at, for example, at 208, the memory element100 has taken on the state 1 (corresponding to 200 on FIG. 2), at 210,the memory element 100 has taken on the state 2 (corresponding to 202 onFIG. 2), at 212, the memory element 100 has taken on the state 3(corresponding to 206 on FIG. 2), and at 214, the memory element 100 hastaken on the state 4 (corresponding to 204 on FIG. 2). The level ofresistance for each of these states is indicated in FIG. 13( a) in Table1, at a column labeled “Total R”. For example, at state 1, the R, inFIG. 3 is indicated as being 3 kilo ohms (K Ohms) by FIG. 13( a) inTable 1. At state 2, the R, in FIG. 3, is indicated as being 4 K Ohmsand so on. The values used for resistance serve as examples only suchthat other values may be employed without departing from the scope andspirit of the present invention.

It should be noted that different aspect ratio or anisotropy associatedwith the different MTJs 124 and 126 causes the different switching ofthe MTJs, which results in two bits being stored in the memory element100. In other embodiments, some of which will be shortly presented anddiscussed, the size of the barrier layers of the MTJs are changed toeffectuate different resistances. In yet other embodiments, the size ofthe MTJs are changed to the same.

FIG. 4 shows a graph 250 of the tunneling magneto resistance (TMR),shown in the y-axis, vs. the resistance area (RA). The TMR is definedas:TMR=(Rh−Rl)/Rl  Eq. (1)

Wherein Rh is resistance at a high state and Rl is resistance at a lowstate.

The graph 250 of FIG. 4 serves merely as an example to convey thedifference in TMR or percentage increase as the RA increases. Forinstance, at an RA of 2 ohm-micro-meters squared, the TMR is 100% whileat a RA of 10, the TMR is 150% where the thickness of the barrier layerof the MTJ is between 14-24 Angstroms.

FIG. 5 shows relevant layers of a multi-state current-switching magneticmemory element 600 are shown, in accordance with another embodiment ofthe present invention. The memory element 600 is shown to include abottom electrode 122 on top of which is shown formed a pinning layer 120on top of which is shown formed a fixed layer 118, on top of which isshown formed a barrier layer 116, on top of which is formed a free layer114, on top of which is shown formed a non-magnetic layer 112, as thatshown in FIG. 1. As previously indicated, relative to FIG. 1, the MTJ126 comprises the layers 114, 116 and 118. However, in the embodiment ofFIG. 5, the MTJ 612, which is made of a free layer 602, a barrier layer604 and a fixed layer 606, is smaller, in its planar dimension, than theMTJ 126 of FIG. 1, which causes the MTJ 612 to have a differentresistance than that of the MTJ 126.

In FIG. 5, the free layer 602 is shown to be formed on top of the layer112 and on top of the layer 602 is shown formed the layer 604, on top ofwhich is shown formed the layer 606, on top of which is shown formed apining layer 608, a top electrode 610. The MTJs 126 and 612 are shownseparated by the layer 112. The MTJs 126 and 612 form the relevant partsof a stack of memory elements. In fact, while two MTJs are shown to formthe stack of FIG. 5, other number of MTJs may be stacked for storingadditional bits of information.

The difference in the planar dimension of the MTJs 612 to that of theMTJ 126 is approximately 1 to 10 and typically 1 to 3, in one embodimentof the present invention. The material for each of the layers of thememory element 600 may be the same as that of counterpart layers of thememory element 100. For example, the layer 602 is made of the samematerial as that of the layer 110 and the layer 604 is made of the samematerial as that of the layer 108 and the layer 606 is made of the samematerial as the layer 106 and the layer 608 is made of the same materialas the layer 104. The top electrodes 610 and 102 are made of the samematerial. In another embodiment, the MTJ 612 may be larger, in size, inthe same planar dimension, that the MTJ 126.

The operation of the embodiment of the embodiment of FIG. 5 is the sameas that of FIG. 1

FIG. 6 shows relevant layers of a multi-state current-switching magneticmemory element 700, in accordance with yet another embodiment of thepresent invention. The memory element 700 to include a bottom electrode122 on top of which is shown formed a pinning layer 120 on top of whichis shown formed a fixed layer 118, on top of which is shown formed abarrier layer 116, on top of which is formed a free layer 114, on top ofwhich is shown formed a non-magnetic layer 112, as that shown in FIGS. 1and 6. As previously indicated, relative to FIGS. 1 and 6, the MTJ 126comprises the layers 114, 116 and 118. However, in the embodiment ofFIG. 6, the MTJ 714, which is shown to comprise a free layer 706, abarrier layer 708 and a fixed layer 710, is shown to be smaller in itsplanar dimension than the MTJ 126 causing the MTJ 710 to have adifferent resistance than that of the MTJ 126.

The MTJs 126 and 714 are shown separated by the layers 702 and 704.Although the layer 704 serves to pin the layer 706 while the layer 702serves to isolate the MTJ 126 and is an amorphous only to the layer 114.The layer 702, in one embodiment of the present invention, is made oftwo non-magnetic layers, such as Ta and/or an amorphous alloy, the sameas Nickel-niobium (NiNb) or nickel-phosphorus (NiP). The MTJs 126 and612 form the relevant parts of a stack of memory elements. In fact,while two MTJs are shown to form the stack of FIG. 5, other number ofMTJs may be stacked for storing additional bits of information.

The difference in the planar dimension of the MTJs 714 to that of theMTJ 126 is 1 to 10, and typically 1 to 3 in one embodiment of thepresent invention. The material for each of the layers of the memoryelement 700 may be the same as the counterpart layers of the memoryelement 100 or that of the memory element 600. For example, the layer710 is made of the same material as that of the layer 110 and the layer708 is made of the same material as that of the layer 108 and the layer706 is made of the same material as the layer 106 and the layer 704 ismade of the same material as the layer 104. The top electrodes 712 and102 are made of the same material. In another embodiment, the MTJ 714may be larger, in size, in the same planar dimension, that the MTJ 126.

FIG. 7 shows relevant layers of a multi-state current-switching magneticmemory element 800, in accordance with still another embodiment of thepresent invention. In FIG. 7, the memory element 800 is shown to includea bottom electrode 802 on top of which is shown formed a pinning layer804 on top of which is shown formed two fixed layers on either sidethereof. That is, a fixed layer 806 is shown formed on one side of thelayer 804 and a fixed layer 808 is shown formed on an opposite side ofthe layer 804.

In FIG. 7, two MTJs are shown formed on either side or top of the layer804. Namely, an MTJ 820 is shown formed on one side of the layer 804 andanother MTJ 822 is shown formed on an opposite side of the layer 804.The MTJ 820 includes the fixed layer 806, which is formed on top of thelayer 804 and the barrier layer 810 shown formed on top of the layer 806and the free layer 812 shown formed on top of the layer 810. The MTJ 822is shown to include the fixed layer 808, which is formed on top of thelayer 704 and the barrier layer 814, which is shown formed on top of thelayer 808 and the free layer 816, which is shown formed on top of thelayer 814. A top electrode 818 is shown formed on top of the MTJs 820and 822 or more specifically on top of the layers 812 and 816. The topelectrode 818 is typically made of two layers, such as Ta and aconductive, non-magnetic material.

In forming the memory element 800, the layer 804 is formed on top of thebottom electrode and the layers of the MTJs 820 and 822 are formed ontop of the layer 804 and on top of the MTJs 820 and 822 is formed thetop electrode 818. The layers of the MTJs 820 and 822 are formeduniformly and continuously on top of the layer 804 and a trench 824,which is basically an empty space or hole is formed, prior to depositingthe top electrode 818, by etching through the layers of the MTJs 820 and822. In this manner, the fixed layers of the MTJs 820 and 822 are thesame layer prior to etching and the barrier layers of the MTJs 820 and822 are the same layer prior to etching and the free layers of the MTJs820 and 822 are the same layer prior to etching.

In one embodiment of the present invention, the trench 824 is filledwith a dielectric material, such as silicon dioxide (SiO2) or siliconnitride (SiNx) to enhance stability.

After etching, the top electrode 818 is deposited or formed on top ofthe MTJs 820 and 822. The embodiment of FIG. 7, as the embodiments ofFIGS. 6, 5 and 1 store two bits of information, on bit in each MTJ.Thus, the MTJ 820 is for storing one bit and the MTJ 822 is for storinganother bit of information. However, more bits may be stored by addingMTJs. In FIG. 7, additional MTJs may be added on top of the layer 804 orthe MTJs 820 and 822. With the addition of MTJs, beyond that which isshown in FIG. 7, additional notches or spaces are formed between theMTJs, such as the space or notch 824.

FIG. 13( b) in Table 2 shows certain exemplary characteristics of theembodiment of FIG. 7. It should be noted that similarly, FIG. 13( a) inTable 1 shows certain exemplary characteristics of the embodiments ofFIGS. 1, 5 and 6. For example, in FIG. 13( b) in Table 2, under the“Total R” column, there is shown the resistance at each state of thememory element 800, such as the state 1, the state 2, the state 3 andthe state 4. As previously noted, each state represents a binary valuesuch that four states, and represented by two bits are stored. Theprogramming current, in micro amps, i.e. the current needed to programthe memory element 800 to a given state, is indicated in the last columnof FIG. 13( b) in Table 2, under the label “Prog I”.

In an alternative embodiment of the present invention, a non-uniformswitching based non-volatile magnetic memory element, such as thenon-uniform switching based non-volatile magnetic memory element 100disclosed in U.S. patent application Ser. No. 11/674,124 entitled“Non-Uniform Switching Based Non-Volatile Magnetic Base Memory”, filedon Feb. 12, 2007, may be employed to replace the MTJs of the variousembodiments shown and discussed herein. For example, the MTJ 124 or theMTJ 126 may be replaced with a non-uniform switching based non-volatilemagnetic memory element. Other MTJs discussed herein may also bereplaced with non-uniform switching based non-volatile magnetic memoryelement. This advantageously further reduces the requisite switchingcurrent to enhance system performance.

FIG. 8 shows a program/erase circuit for programming and/or erasing thememory elements of the various embodiments of the present invention. InFIG. 8, a current source 902 is shown coupled to a current minor circuit904, which is shown coupled to the switch 906, which is, in turn, showncoupled to the switch 908, which is shown coupled to the multi-statecurrent-switching magnetic memory cell 914, which is shown coupled tothe switch 916. Further shown in FIG. 8, a current source 918 is showncoupled to a current minor circuit 920 and further shown coupled to Vccon an opposite end thereto. The circuit 920 is further shown coupled tothe switch 910.

The circuit 904 is shown to include a P-type transistor 922, a P-typetransistor 924 and a P-type transistor 926. The source of each of thetransistors 922, 924 and 926 are shown coupled to Vcc. Vcc is at apredetermined voltage level that is higher than ground. The gate of thetransistor 922 is shown coupled to the current source 902 and theopposite side of the current source 902 is shown coupled to ground. Thedrain of the transistor 922 is shown coupled to its gate as well as tothe gate of the transistor 924 and the gate of the transistor 926. Thedrains of the transistors 924 and 926 are shown coupled to the switch906. The memory cell 914 is shown to include an MTJ 910, an MTJ 912 andan access transistor 940. The MTJ 912 is shown coupled in series to theMTJ 912, which is shown coupled to the drain of the transistor 940. Thegate of the transistor 940 is shown coupled to the word line 942. Theword line 942 selects a memory cell. The source of the transistor 940 isshown coupled to the switch 916.

The circuit 920 is shown to include an N-type transistor 928, an N-typetransistor 930 and an N-type transistor 932. The drains of thetransistors 928, 930 and 932 are shown coupled to ground. The gate ofthe transistor 932 is coupled to the current source 918 and is furthercoupled to the drain of the transistor 932 and is further coupled to thegate of the transistor 930 as well as to the gate of the transistor 928.The drain of the transistors 930 and 928 are shown coupled to the switch910.

Each of the switches 908 and 916 are shown operative to switch betweentwo states, a program state and an erase state. The switches 906 and 910are shown operative to switch between two states.

The MTJs 910 and 912 are similar to the MTJs of previous figures, suchas those depicted in FIGS. 1 and 6. In an alternative embodiment, theMTJs 910 and 912, coupled in parallel, would be similar to the MTJsshown in FIG. 7. Each MTJ 910 and 912 possesses a resistance of adifferent or unique value. The difference in their resistance resultsfrom the difference in the aspect ratio or size or anisotropy of theMTJs.

The size of the transistor 926 is greater than the size of thetransistors 922 and 924. Similarly, the size of the transistor 928 isgreater than the size of the transistors 930 and 932. In one embodimentof the present invention, the size difference of the foregoingtransistors is 4 to 1. To explain the operation of programming, anexample is provided with fixed values but it should be noted that thesevalues may be altered without departing from the scope and spirit of thepresent invention.

In operation, to program the memory cell 914 to a state 1, a current oflevel of 50 micro Amps is applied by the current source 902 to thecircuit 904, which is amplified to 4× the current level or 200microAmps, as shown in FIG. 13( a) in Table 1 because the transistor 926is able to drive this level of current. This causes the switch 906 toswitch to the state indicated at 944. The switch 908 is set to ‘program’state, as is the switch 916, which causes the 200 micro amp current toflow through the MTJs 910 and 912 and the transistor 940 is selected byraising the voltage on the word line 942. This results in programming ofstate 1. The magnetic moment of the free layers of the MTJs 910 and 912will be caused to be aligned with the magnetic moment of that of theirrespective fixed layers. This results in the lowest resistance of thememory cell 914, as indicated in FIG. 13( a) in Table 1.

In programming the memory cell 914 to a state 2, a current of level of50 micro Amps is applied by the current source 918 to the circuit 920,which is the same current level as that generated by the circuit 920.The current level for state 2 is indicated in FIG. 13( a) in Table 1.The switch 910 is caused to be switched to the state indicated at 948.The switches 908 and 916 are both set to ‘erase’ state, which causes the50 micro amp current to flow through the MTJs 910 and 912 and thetransistor 940 is selected by raising the voltage on the word line 942.This results in programming of state 2. The magnetic moment of the freelayer of the MTJ 910 is caused to be switched to an anti-parallel stateor a state that is in opposite to being aligned with its respectivefixed layer. The MTJ 912 remains in the state it was in at state 1. Thereason for this is, that in one embodiment of the present invention,with the aspect ratio of the MTJ 912 being higher than that of MTJ 910,it is prevented from switching. This results in the resistance of thememory cell 914 indicated in FIG. 13( a) in Table 1.

In programming the memory cell 914 to a state 3, a current of level of50 micro Amps is applied by the current source 918 to the circuit 920,which causes the current level, generated by the transistor 928 to be 4times that of the level of the current source, or 200 micro amps. Thecurrent level for state 3 is indicated in FIG. 13( a) in Table 1. Theswitch 910 is caused to be switched to the state indicated at 950. Theswitches 908 and 916 are both set to ‘erase’ state, which causes the 200micro amp current to flow through the MTJs 910 and 912 and thetransistor 940 is selected by raising the voltage on the word line 942.This results in programming of state 3. The magnetic moment of the freelayers of the MTJs 910 and 912 are caused to be switched to ananti-parallel state relative to their respective fixed layers. Thisresults in the resistance of the memory cell 914 to be that indicated inFIG. 13( a) in Table 1.

To program the memory cell 914 to a state 4, a current of level of 50micro Amps is applied by the current source 902 to the circuit 904,which is the current level of the circuit 904 and that which isindicated in FIG. 13( a) in Table 1 for state 4. This causes the switch906 to switch to the state indicated at 946. The switch 908 is set to‘program’ state, as is the switch 916, which causes the 50 micro ampcurrent to flow through the MTJs 910 and 912 and the transistor 940 isselected by raising the voltage on the word line 942. This results inprogramming of state 4. The magnetic moment of the free layer of the MTJ910 will be caused to be aligned with the magnetic moment of that of itsrespective fixed layer. The MTJ 912 remains in its anti-parallel state,the reason for this is due the difference in the aspect ratios of thetwo MTJs as discussed hereinabove. This results in a resistance of thememory cell 914 indicated in FIG. 13( a) in Table 1.

FIG. 9 shows a read circuit for reading the memory elements of thevarious embodiments of the present invention. FIG. 9 is shown to includea memory cell 1002 coupled to a sense amplifier circuit 1004, which isshown coupled to a reference circuit 1006. The memory cell 1002 is shownto include an access transistor 1008, an MTJ 1010 and an MTJ 1012. Thetransistor 1008 is shown to have a drain, a source and a gate. The gateof the transistor 1008 is shown coupled to a word line 1014, the drainof the transistor is shown coupled to ground and the source of thetransistor is shown coupled to the MTJ 1010.

It should be noted that wherever values are indicated herein, they areto merely serve as examples with the understanding that other suitablevalues are anticipated. It is further noted that while reference is madeto an N-type or P-type transistor, either type or other suitable typesof transistors may be employed, as the type of transistor indicated inthe foregoing embodiments, merely serve as examples.

The circuit 1006 is shown to include a number of state referencecircuits, indicated as state reference circuit 1020, 1022 and 1024. Eachof the circuits 1020-1024 includes an access transistor and a referenceresistor. For example, the circuit 1020 is shown to include a referenceresistor 1026 coupled on one side to the circuit 1004 and Vcc and on theother side to the drain of an access transistor 1028. The gate of thetransistor 1028 is shown coupled to a select signal, namely select 1signal 1040.

Similarly, the circuit 1022 is shown to include a reference resistor1030 coupled on one side to the circuit 1004 and Vcc and on the otherside to the drain of an access transistor 1032. The gate of thetransistor 1032 is shown coupled to a select signal, namely the select 2signal 1042. The circuit 1024 is shown to include a reference resistor1034 coupled on one side to the circuit 1004 and Vcc and on the otherside to the drain of an access transistor 1036. The gate of thetransistor 1044 is shown coupled to a select signal, namely the select 3signal 1044.

The MTJs 1010 and 1012, as stated relative to FIG. 8, are similar to theMTJs of the embodiments of the present invention except that in the caseof FIG. 7, the MTJs of the read circuit would be coupled in parallelrather than in series, shown in FIG. 9.

During a read operation, the memory cell 1002 is selected by raising thevoltage of the word line 1014. The circuit 1004 compares the totalresistance of the MTJs 1010 and 1012 with the resistances of thereference resistors of the state reference circuits. For example, theresistance of the MTJs 1010 and 1012 (collectively or added together) iscompared to the resistance of the resistor 1026 and if it is determinedto be less, the state of the memory cell 1002 is declared as binaryvalue ‘00’ or perhaps, state 1. However, if the resistance of the MTJs1010 and 1012, collectively, is determined to be higher than that of theresistor 1026, the former is then compared to the resistance of theresistor 1030 and there again, if the resistance of the MTJs 1010 and1012 is less than the resistor 1030, the state 2 or binary value ‘01’.If the resistance of the MTJs 1010 and 1012 is determined to be greaterthan the resistor 1030, the resistance of the MTJs 1010 and 1012 iscompared to the resistance of the resistor 1034 and if the resistance ofthe former is determined to be lower, the state 3 or binary value ‘10’is declared (or read), otherwise, the state 4 or binary value ‘11’ isdeclared.

The select signal of each of the circuits 1020-1024 are used to selectthe corresponding circuit. For example, to compare the resistance of theMTJs to the resistance of the resistor 1026, the signal 1040 isactivated thereby turning on the transistor 1028. In the meanwhile, theremaining transistors of the circuit 1006 are off. Similarly, to comparethe resistance of the MTJs to the resistance of the resistor 1030, thesignal 1042 is activated thereby turning on the transistor 1032. In themeanwhile, the remaining transistors of the circuit 1006 are off. Tocompare the resistance of the MTJs to the resistance of the resistor1034, the signal 1044 is activated thereby turning on the transistor1036. In the meanwhile, the remaining transistors of the circuit 1006are off.

Examples of resistance values of the reference resistors are averages ofthe resistances of the MTJs 1010 and 1012. For example, the resistanceof the resistor 1026 is the average of the resistances of the MTJs 1010and 1012 at the states 1 and 4, as indicated in FIG. 13( a) in Table 1.The resistance of the resistor 1030 is the average of the resistances ofthe MTJs 1010 and 1012 at the states 2 and 4, as indicated in FIG. 13(a) in Table 1. The resistance of the resistor 1034 is the average of theresistances of the MTJs 1010 and 1012 at the states 2 and 3, asindicated in FIG. 13( a) in Table 1. For example, in one embodiment ofthe present invention, the resistor 1026 has a resistance of 3.5kilo-ohm, which is the average of 3 and 4 kilo-ohms. The resistance ofthe resistor 1030 is 4.5 kilo-ohms, which is the average of 5 and 4kilo-ohms and the resistance of the resistor 1034 is 5.5 kilo-ohms,which is the average of 5 and 6 kilo-ohms.

In alternative embodiments of the present invention, the MTJs (or memoryelements) disclosed in U.S. patent application Ser. No. 11/674,124entitled “Non-Uniform Switching Based Non-Volatile Magnetic BaseMemory”, filed on Feb. 12, 2007, may be employed in the embodiments ofFIGS. 8 and 9 herein.

It should be noted that the objects of the drawings or figures discussedand presented herein are not necessarily drawn to scale.

Referring now to FIG. 11( a), a flowchart illustrates the manufacturingsteps of prior multi-state magnetic memory element wafers. The processbegins with the movement of wafer #1 to station seed layer with step1182, and a seed layer is then formed on wafer #1. From there, wafer #1proceeds to station AFM layer with step 1183, and an anti-ferromagnetic(AFM) layer is formed on wafer #1. At step 1184, wafer #1 is transportedto station fixed layer so that a fixed layer can be formed thereon.Subsequent to the formation of a fixed layer, step 1185 transports wafer#1 to station barrier layer for the formation of a barrier layer; step1186 transports wafer #1 to station free layer for the formation of afree layer; and step 1187 transports wafer #1 to station isolation layerfor the formation of an isolation layer. At this point, wafer #1 thenflows backwards through the prior steps, beginning by going from stationisolation layer to station free layer in step 1188, and so on. After thedeposition of a fixed layer on wafer #1 at station fixed layer, wafer #1travels to station anti-ferromagnetic layer at step 1191 and ananti-ferromagnetic layer is formed; and then on to receive a cap layerin step 1192. As better shown in FIG. 11( b), wafer #1 must passbackwards through the manufacturing hardware (notice step 1188 afterstep 1187), the manufacturing of wafer #2 is delayed until wafer #1 hascleared step 1192 in the wafer transport module. Ultimately, thisresults in a single wafer tying up an entire wafer transport moduleuntil the manufacturing off the wafer is completed.

Conversely, in an embodiment of the present invention, it is possiblefor multiple wafers to be undergoing manufacturing steps within thewafer transport module at all times, and the rate of manufacturing isthereby dramatically increased.

Referring now to FIG. 12( a), a flow chart shows the manufacturingprocess of an embodiment of the present invention. After a seed layer isformed on wafer #1, and wafer #1 is moved to station AFM layer at step1183, wafer #2 can immediately be placed into station seed layer, step1205, for the formation of a seed layer thereon. Subsequently, wafer #2moves to station AFM layer at step 1210 at the same time wafer #1 ismoved from station AFM layer to station fixed layer in step 1184, andwafer #3 is moved to station seed layer in step 1206. This processcontinues on in such a manner so that at step 1186, when wafer #1 is atstation free layer, there are five wafers in the wafer transport modulebeing manufactured in parallel, wafer #5 being at station seed layer. Atthis point, shown as step 1200 in FIG. 12( a), the wafer transportmodule determines whether a second MTJ has yet been deposited on thewafer within. If not, the wafer, wafer #1, now moves to station seedlayer in step 1201, and proceeds, for a second time, through thestations of the wafer transport module. Upon wafer #1's return to step1200, a second MTJ is present, and wafer #1 proceeds to station caplayer, step 1202, and a cap layer is formed thereon.

Subsequent to wafer #1 having formed a second seeding layer, wafer #2will as well, and so on to wafer #5. Because each station will containwafers #1-5 during this time, no new wafers will be entering the wafertransport module until wafer #5 is at station AFM layer for formation ofthe second AFM layer and wafer #1 has been removed from the wafertransport module.

In other embodiments of the present invention, ‘n’ number of MTJs (morethan two) may be desired on each wafer, and consequently the cycle willtherefore proceed n times through each of the stations prior to step1200.

This manner of manufacturing results in faster process qualification andoptimization, and, because of the frequency at which wafer transportmodules are shut down for maintenance and repair, consequently resultsin increased manufacturing uptime. This in turn results in higherthroughput during manufacturing (i.e. larger number of wafers/hr) andhence lower cost per wafer and thereby lower cost for the finishedmemory products. In addition, more than one process step can be combinedinto one process chamber, e.g. if the process chamber has more than onesputtering cathode.

Referring now to FIG. 10, the relevant layers of multi-statecurrent-switching magnetic memory element 1100 are shown, in accordancewith an embodiment of the present invention. Memory element 1100 isshown to include bottom electrode 1101, on top of which is formedseeding layer 1103, on top of which is formed pinning layer 1105, on topof which is formed fixed layer 1107, on top of which is formed barrierlayer 1109, on top of which is formed free layer 1111, on top of whichis formed isolation layer 1113, on top off which is formed seeding layer1115, on top of which is formed pinning layer 1117, on top of which isformed fixed layer 1119, on top of which is formed barrier layer 1121,on top of which is formed free layer 1123, on top of which is formed acap layer 1124, on top of which is formed top electrode 1125.

Together, free layer 1111, barrier layer 1109, and fixed layer 1107 formMTJ 1, or MTJ 1140, of stack 1100. Similarly free layer 1123, barrierlayer 1121, and fixed layer 1119 form MTJ 2, or MTJ 1150, of stack 1100.

Top electrode 1125 and bottom electrode 1101 are made of tantalum (Ta)in one embodiment of the present invention; however, other conductivematerials, which are capable of passing current to MTJs 1140 and 1150,may be used. Materials such as TiW, Ti, CrTa, NiTi, NiZr, AlCu mayfunction as ideal electrode materials in alternative embodiments of thepresent invention. Bottom electrode 1101 is built on a metal line,aluminum or copper, for example, which is connected to a selecttransistor. In an alternative embodiment of the present invention,bottom electrode 1101 may also serve the purpose of seeding layer 1103,completely negating the need to have seeding layer 1103, and guide theformation of pinning layer 1105. In such an embodiment, pinning layer1105 would be formed directly on top of bottom electrode 1101.

Seeding layers 1103 and 1115 assist pinning layers 1105 and 1117,respectively, in obtaining the desired crystalline structure at theatomic level. Seeding layers 1103 and 1115 are made of a material, forexample, tantalum, which has molecular structure that induces thesubsequently applied pinning layer to conform to a specific atomicpattern. This pattern, or crystalline structure, is required for pinninglayers 1105 and 1117 to function as intended. Additionally, otherface-centered-cubic (fcc) non-magnetic-alloys, such as that of NiFe—Cr,NiFe—Si, NiFeZr or NiFeTa, can be inserted underneath theantiferromagnetic layer of the pinning layer 1105 as well as 1117. Thisagain results in a better conformal growth at the atomic-level andthereby resulting in a higher pinning field.

Pinning layers 1105 and 1117 are also known as syntheticanti-ferromagnetic layers with the adjacent ferromagnetic layers namely,1107 and 1119, and function to keep the magnetic orientation of fixedlayer 1107 and fixed layer 1119, respectively, static. In an embodimentof the current invention, pinning layers 1105 and 1117 are each furtherformed of three components or sub-layers-ruthenium (Ru) layer 1130,cobalt iron (CoFe) layer 1132, and iron manganese (IrMn) layer 1134.IrMn layer 1134 is formed on top of either seeding layer 1115, whichwill be discussed in more detail shortly, or bottom electrode 1101. CoFelayer 1132 is formed on top of IrMn layer 1134, and Ru layer 1130 isformed on top of the CoFe layer 1132. Similarly, the pinning layer 1105is made of multiple or sub-layers, in one embodiment of the presentinvention. In this case, the IrMn is formed on top of the seeding layer1103, the CoFe layer is formed on top of the IrMn layer, and the Rulayer is formed on top of the IrMn layer.

The typical thickness of CoFe layer 1132 is 2-10 nm thick, the Ru layer1130 is 0.6-1.0 nm thick, and IrMn layer 1134 is 5-25 nm thick. Thesethickness values provide the right combination to ensure pinning of thefixed layer as well as ensuring lower demagnetization field for making ahigh reliability as well as high performance storage memory.

The magnetic polarity of pinning layers 1105 and 1117 are permanentlyfixed by an annealing process that follows the complete deposition ofall layers of stack 1100. The process involves heating of the entirewafer under conditions of a large single direction magnetic field, foran extended period of time. In one embodiment the annealing temperatureis 375 degC and the external uniaxial field is 6 kOe for over 2 hours.

The switching currents of free layers 1123 and 1111 are dependent uponthe composition, structure, size and geometry of each respective layer.The switching current of free layers 1123 and 1111, of MTJs 1140 and1150 respectively, is defined as the amount of current that, whenapplied to memory element 1100, causes the reversal of a free layer'smagnetic moment. Each free layer in an embodiment of the presentinvention has a unique switching current. In an embodiment of thepresent invention the unique switching currents are a consequence of thecomposition of free layers 1123 and 1111; and the composition of freelayers 1123 and 1111 is manipulated by changing the amount of reactivegas used to form each free layer. In a yet another embodiment, a target(sputtering process) containing oxide such as SiO2, TiO2 with themagnetic alloy is deposited on top of the free-layers 1123, 1111 whilethe other layer is deposited using a target containing substantially no(or small amount) of oxides. Thus, for example, if free layer 1123 iscomposed of 30-60% oxide, and free layer 1111 is composed of less than10% oxide, and layers 1123 and 1111 are in a stacked configuration,sharing the same size footprint (100×200 nanometers (nm) in this case),free layer 1123's switching current will be approximately 600 micro-amps(μA), while the switching current of the free layer 1111 will only beapproximately ⅓ of that, 200 μA.

The unique switching currents of the free layers is a consequence of theoxides imparting unique a microstructure to each of the free layers, themicrostructure being a direct function of the amount of oxides presentwhen the free layer was formed. After deposition of both free layers1123 and 1111 an annealing process is performed in one embodiment of thepresent invention. The annealing process, for example, involves heatingof memory element 1100 to temperatures of 350° C. for over 2 hours. Theannealing process results in the formation of non-conductive andnon-magnetic micro-channels within the free layers, which are explainedin detail in respect to free layer 104, of FIGS. 6( b) and (c) of U.S.patent application Ser. No. 11/674,124, entitled “Non-Uniform SwitchingBased Non-Volatile Magnetic Based Memory,” by Ranjan, et at., filed Feb.12, 2007, the contents of which is incorporated herewith as if set outin full. In other embodiments of the present invention, themicro-channels of free layers 1123 and 1111 can be formed by depositingone of the free-layers in presence of reactive gases as described inpatent application Ser. No. 11/674,124, entitled “Non-Uniform SwitchingBased Non-Volatile Magnetic Based Memory,” by Ranjan, et at., filed Feb.12, 2007. In a yet another embodiment, one of the free-layers 1123 or1111 is made of CoFeB-X where X is chosen from one or more of: chromium(Cr), tantalum (Ta), molybedenum (Mo), nickel (Ni), copper (Cu), and thethickness is less than 80% of the other free-layer, and therebyresulting in switching current ratios of over 2 between the twoindividual magnetic tunnel junctions (MTJs). In a yet anotherembodiment, one of the free-layers 1123 or 1111, typically the topmostfree layer has the effective average saturation magnetization of lessthan 75% of the bottom free layer. In any case, the free layers aredesigned in such a way that their switching currents are different by atleast a factor of two.

FIG. 13( c) in Table 3 further shows how stack 1100 has four possiblestates, depending upon the amount and direction of current that isapplied to stack 1100. In the case of State I, or ‘00’, the magneticmoments of the free layers 1111 and 1123 are in a direction parallel tothat of their respective fixed layers, 1107 and 1119, upon theapplication of approximately 600 μA of current to stack 1100. Theapplication of approximately −600 μA of current results in the magneticmoment of both free layers 1111 and 1123 being switched to a stateanti-parallel with their respective fixed layers, 1107 and 1119,resulting state ‘11’.

In one embodiment of the present invention, current 1181 is generallyapplied to the stack 1100 at the bottom electrode 1101 and through theintermediate layers to the top electrode 1125.

In another embodiment of the present invention, current 1180 is appliedto the top electrode 1125, through the intermediate layers, to thebottom electrode 1101. The application of current with a positive value(i.e., 600 μA) is current that is applied in the direction of current1180; starting at top electrode 1125, passing through the intermediatelayers of memory element 1100, and exiting at bottom electrode 1101. Theapplication of current with a negative value (i.e., −600 μA) is currentthat is applied in the direction of current 1181; starting at bottomelectrode 1101, passing through the intermediate layers of memoryelement 1100, and exiting at top electrode 1125.

Alternatively, when only approximately 200 μA and −200 μA of current isapplied to stack 1100, the magnetic moment of a free layer of one MTJ iscaused to be parallel with the magnetic moment of the fixed layer, andthe other is caused to be anti-parallel. To further clarify, forexample, approximately 200 μA results in parallel magnetic moments inMTJ 1150, and anti-parallel magnetic moments in MTJ 1140; whereas −200μA results in anti-parallel magnetic moments in MTJ 1150 and parallelmagnetic moments in MTJ 1140—the states ‘01’ and ‘10’ respectively.

The switching current applied to stack 1100 controls the state of themagnetic moments of the free layers of MTJs 1140 and 1150, and thus thebinary value represented within stack 1100. The application of thisswitching current therefore results in what are program and eraseoperations, and these operations are controlled by a program and erasecircuit. For further details regarding the function of the program anderase circuit, see circuit 900 and related discussion, in FIG. 8 of U.S.patent application Ser. No. 11/678,515, entitled “A High Capacity LowCost Multi-State Magnetic Memory,” filed Feb. 23, 2007, by Ranjan etat., the contents of which are incorporated herewith as though set forthin full.

Barrier layers 1109 and 1121 act as filters for electrons with differentspins, which gives rise to different amounts of tunneling currents,thereby causing there to be two unique resistance values for each MTJ,depending on the orientation of the magnetic moment of the free layer inrelation to that of its respective fixed layer. In an embodiment of thepresent invention, barrier layers 1109 and 1121 are composed ofsubstantially crystalline, having a (100) crystalline structure with(100) indicating crystal planes substantially parallel to the filmplane) magnesium oxide (MgO). The MgO barrier layers 1109 and 1121 areinitially formed as crystalline layers of MgO whereas the adjacentlayers 1111 and 1107 for 1109 layer, and layers 1123 and 1119 to thebarrier layer 1121, are substantially amorphous of CoFeB alloy. Theannealing process previously discussed herein brings about a change inthe transformation in the amorphous layers into crystalline layer ofsubstantially cubic CoFeB alloy, such as one having a (100) structure.This results in the formation of coherent channels for tunneling ofmagnetic spins leading to high TMR (tunneling magneto-resistance) ratio.

In one embodiment of the present invention, the barrier layer of eachMTJ has a different thickness, i.e., the thickness of barrier layer 1109is different from that of barrier layer 1121. This difference inthickness causes MTJs 1140 and 1150 to have not only two uniqueresistance values per MTJ, but entirely unique resistance values fromeach other—thus causing stack 1100 to have four different resistancevalues—two for each MTJ. A stack, for example, with three MTJs wouldhave a third barrier layer of a third thickness, different from theother two, causing the associated stack to then have six differentresistance values—the resistance value at any time being dependent uponthe states of the MTJs within.

Referring now to FIG. 13( d) in Table 4, resistance values of MTJs,depending upon the MTJ state and barrier layer thickness, are estimated.For example, in Scenario 1 the ratio of the thickness of the barrierlayer of one of the MTJs of a stack, to the thickness of the barrierlayer of another MTJ of the same stack is 1:1.2—or a thickness ofapproximately 1 nm for layer 1109 and a thickness of approximately 1.2nm for barrier layer 1121. As a consequence of the different barrierlayer thicknesses, the resistance of MTJ1 (MTJ 1140) is approximately400 ohms Ω when it is in state 0, and about 800Ω when it is in state 1.Accordingly, the resistance for MTJ2 (MTJ 1150) will be about 600Ω whenit is in state 0, and about 1320Ω when it is in state 1. Scenarios 2 and3 of FIG. 13( d) in Table 4 estimate other relative resistance values,depending upon the thickness of the barrier layers.

The resistance of MTJs 1140 and 1150 is used to determine the state ofstack 1100 (i.e. 00, 01, 10 or 11) whenever a read operation takesplace. The total resistance of stack 1100, a combination of theresistance of MJT 1140 and MJT 1150, is read by a read circuit, whichthen compares the resistance of stack 1100 to a series of referencecircuits. The resistance of each MTJ in stack 1100 is dependent upon theMTJs state; that is, whether the free layer and fixed layer are parallelor anti-parallel at that time. A detailed description of the readingprocess of stack 1100 is discussed in further detail in regards to readcircuit 1000 within U.S. patent application Ser. No. 11/678,515,entitled “A High Capacity Low Cost Multi-State Magnetic Memory, filed onFeb. 23, 2007, by Ranj an et at.

FIG. 13( e) in Table 5 shows how the total resistance of stack 1100changes depending upon the state of MTJs 1140 and 1150 within. Inscenario 1 of FIG. 13( d) in Table 4 and FIG 13(e) in Table 5, a 1:1.2barrier layer thickness ratio, as described prior, is used, and thetotal resistance of stack 1100 is estimated to be 1000Ω with both MTJ1140 and MTJ 1150 having free layers with magnetic moments in a paralleldirection relative to their respective fixed layers, state 00. The totalresistance of stack 1100 is increased by about 400Ω, to 1400Ω, whenswitched to state 01. Total resistance of stack 1100 can be furtherincreased by switching stack 1100 to states 01, or 11, for resistancesoff about 1720Ω, and 2120Ω respectively.

Each sequential increase in resistance of stack 1100 under scenario 1 isapproximately 300-400Ω greater than that of the prior state. Thisroughly equal stepwise increase of each subsequent resistance value isan ideal configuration, as it lends itself to a more simpler andreliable reading circuit design.

Referring now to scenarios 2 and 3 of FIG. 13( e) in Table 5, it becomesapparent that as the ratio of the barrier thickness increases, so willthe total resistance of stack 1100 while in any of its four possiblestates. In scenario 3, where barrier layer 1121 of MTJ 1151 is twice asthick as barrier layer 1109 of MTJ 1140, i.e. 2 nm and 1 nm thick, thetotal resistance of the circuit with both MTJs' magnetic moments beingin parallel (state 00) is 2400Ω—significantly more than the maximumresistance of stack 1100 with a barrier layer ratio of 1:1.2; even whenthe free layers of MTJs 1140 and 1150 have magnetic moments inanti-parallel states relative to their respective fixed layers. Theremaining total resistances values of stack 1100 under the scenario of a2:1 barrier layer thickness ratio is 2800Ω in state 01, then 6400Ω instate 10, and 6800Ω in state 11. The relatively consistent stepwiseincrease in resistance, as experienced in scenario 1, is lost inscenario 3, and instead the total resistance increases in an irregularmanner although monotonic—from 400-3600Ω between subsequent states. Suchradical differences may make the circuit more complicated.

In an embodiment of the present invention, barrier layers 1109 and 1121are composed substantially of a non-magnetic material, for example,magnesium oxide (MgO). In alternative embodiments of the presentinvention, barrier layers 1109 and 1121 are composed of one or more ofthe following compounds—aluminum oxide (Al2O3), titanium oxide (TiO2),magnesium oxide (MgOx), ruthenium oxide (RuO), strontium oxide (SrO),Zinc oxide (ZnO).

Isolation layer 1113 is typically 2-200 nm thick, with a preferredthickness range of 2-50 nm. Isolation layer 1113 is formed on top offree layer 1111 of MTJ 1140, and isolates MTJs 1140 and 1150 from eachother. The isolation of MTJ 1140 from 1150 serves three purposes: (1)magnetic isolation by reducing magnetostatic interaction, (2)microstructure isolation by separating the seeding effect, and (3)separation of layer states.

If additional MTJs were to be formed on stack 1100, an additionalisolation layer would be formed below the seeding layer of each of theadditional MTJs, and on top of the free layer of the MTJs below eachaddition MTJ. It should be noted that the most preferred choice ofmaterials for isolation layer 1113 is an amorphous non-magnetic alloy,for example, nickel niobium (NiNb), nickel phosphorous (NiP), nickelvanadium (NiV), nickel boron (NiB), or copper zirconium (CuZr); acrystalline non-magnetic alloy may also work.

While the embodiments described here so far have their magnetic momentsin-plane, i.e., substantially parallel to the surface planes, thisinvention also applies to magnetic memory cells having substantiallyperpendicular magnetic orientation where the magnetic moments of thefree- and fixed layers 1107, 1111, 1119 and 1123 are substantiallyperpendicular to the film plane. Of course, the choice of the alloys forthese layers as well as adjacent layers will be different in order toinduce and support the perpendicular magnetic orientation in theselayers.

Although the present invention has been described in terms of specificembodiment, it is anticipated that alterations and modifications thereofwill no doubt become apparent to those more skilled in the art. It istherefore intended that the following claims be interpreted as coveringall such alterations and modification as fall within the true spirit andscope of the invention.

What is claimed is:
 1. A multi-state current-switching magnetic memoryelement configured to store a state by current flowing therethrough toswitch the state comprising: a stack of two or more magnetic tunnelingjunctions (MTJs), each MTJ having a free layer with a switchablemagnetic orientation, a barrier layer and a fixed layer, each MTJ of thestack being separated from other MTJs in the stack by at least oneamorphous isolation layer, the stack operable to store more than one bitof information with each MTJ storing one bit of information, each of thefree layers having a different composition based on the amount of oxidetherein, and each of the free layers of the stack being responsive to aunique switching current based on the composition of the free layer,wherein the free layer switches its magnetic orientation based upon thelevel of the switching current applied thereto, wherein different levelsof current applied to the memory element causes switching to differentstates.
 2. A multi-state current-switching magnetic memory element, asrecited in claim 1, wherein each of the MTJs of the stack has a distinctsize.
 3. A multi-state current-switching magnetic memory element, asrecited in claim 1, wherein the free layers of the MTJs each have aunique thickness, thereby causing each MTJ to switch states at a uniqueswitching current.
 4. A multi-state current-switching magnetic memoryelement, as recited in claim 1, wherein the barrier layers of the MTJseach have a unique thickness, thereby causing each MTJ to switch statesat a unique switching current.
 5. A multi-state current-switchingmagnetic memory element, as recited in claim 4, wherein the barrierlayer of each of the MTJs is made substantially of magnesium oxide (MgO)and may include one or more of the following compounds—aluminum oxide(Al2O3), titanium oxide (TiO2), magnesium oxide (MgOx), ruthenium oxide(RuO), strontium oxide (SrO), Zinc oxide (ZnO).
 6. A multi-statecurrent-switching magnetic memory element, as recited in claim 5,wherein each of the MTJs includes a fixed layer, and a barrier layer,the barrier layer separating the fixed layer and the free layer.
 7. Amulti-state current-switching magnetic memory element, as recited inclaim 6, wherein the fixed layer of each of the MTJs is madesubstantially of magnetic material.
 8. A multi-state current-switchingmagnetic memory element, as recited in claim 7, further including apinning layer formed adjacent to the fixed layer of each of the MTJs. 9.A multi-state current-switching magnetic memory element, as recited inclaim 8, further including a bottom electrode on top of which is formedthe pinning layer of one of the MTJs.
 10. A multi-statecurrent-switching magnetic memory element, as recited in claim 9,further including a top electrode formed on top of the free layer of oneof the MTJs.